The CAT93C56SA-26545T is a high-quality EEPROM (Electrically Erasable Programmable Read-Only Memory) device from ON Semiconductor, a trusted leader in the semiconductor industry. This product is designed for applications that require data storage which can be electrically erased and reprogrammed. It is particularly suitable for use in a wide range of electronic devices such as personal computers, mobile devices, and industrial control systems.
The CAT93C56SA-26545T offers a storage capacity of 2 Kbits with a serial interface for communication. It operates over a voltage range of 2.5V to 5.5V, making it versatile for various power supply conditions. The device's low-power consumption and wide operating voltage range ensure that it can be integrated into energy-sensitive applications without compromising performance.
This EEPROM comes in a compact 8-pin SOIC (Small Outline Integrated Circuit) package, which allows for easy integration into space-constrained designs. The small footprint of the device does not hinder its performance or reliability, making it an excellent choice for designers looking to optimize their board space without sacrificing quality.
The CAT93C56SA-26545T features a fast write cycle time of 5 ms, enabling quick data storage and updates. It also boasts a high endurance with a minimum of 1,000,000 program/erase cycles and a data retention period of over 100 years, ensuring the longevity and reliability of the data stored within.
ON Semiconductor's commitment to quality is evident in the CAT93C56SA-26545T, as it is designed to meet the rigorous standards of the semiconductor industry. The device also supports a wide temperature range, making it suitable for industrial and automotive applications where extreme conditions may be encountered.
In summary, the CAT93C56SA-26545T is a robust, reliable, and high-performance EEPROM device that provides a practical solution for data storage needs in a variety of electronic applications. Its combination of features makes it a smart choice for designers looking for a memory component that offers both efficiency and durability.