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BFR30LT1G

Part No BFR30LT1G
Manufacturer ON Semiconductor
Catalog JFETs (Junction Field Effect)
Description JFET N-CH SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - JFETs
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Drain to Source Voltage (Vdss) 25 V
Current - Drain (Idss) @ Vds (Vgs=0) 4 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id 5 V @ 0.5 nA
Input Capacitance (Ciss) (Max) @ Vds 5pF @ 10V
Power - Max 225 mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number BFR30
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 570612-BFR30LT1G
Ultra Librarian 3D Model Ultra Librarian BFR30LT1G CAD Model

Description

ON Semiconductor BFR30LT1G Product Overview

The BFR30LT1G from ON Semiconductor is a high-performance N-Channel RF Transistor designed to meet the needs of modern electronic applications. This small-signal field-effect transistor is ideal for a wide range of uses, from RF amplification to high-frequency switching. With its compact SOT-23 package, the BFR30LT1G offers designers a convenient and space-saving solution for their circuit designs.

Key Features

  • High-Speed Switching: The BFR30LT1G is optimized for high-speed switching applications, providing rapid response times that are critical in RF and other high-frequency circuits.
  • Low Noise Figure: With a low noise figure, the BFR30LT1G is suitable for RF amplification where signal integrity is paramount, ensuring clear and precise signal amplification.
  • High Gain Bandwidth Product: Featuring a high gain bandwidth product, this transistor can efficiently handle a broad range of frequencies without compromising performance.
  • Low On-Resistance: The low on-resistance of the BFR30LT1G minimizes power loss and heat generation, contributing to the efficiency and longevity of the overall circuit.
  • Enhanced Thermal Performance: The SOT-23 package is designed for optimal thermal performance, aiding in the dissipation of heat and maintaining stability under varying operating conditions.

Applications

The versatility of the BFR30LT1G allows it to be used in a variety of applications, including but not limited to:

  • RF Amplifiers
  • High-Frequency Oscillators
  • Mixers and Modulators
  • Telecommunication Circuits
  • Portable and Wireless Systems
  • Consumer Electronics

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the BFR30LT1G is no exception. It is manufactured to the highest industry standards, ensuring reliability and performance in even the most demanding applications. The BFR30LT1G is also RoHS compliant, reflecting ON Semiconductor's dedication to environmental responsibility.

In conclusion, the BFR30LT1G N-Channel RF Transistor from ON Semiconductor stands out as a superior choice for designers looking for a reliable, high-performance component for their RF and high-frequency applications. Its combination of speed, efficiency, and thermal performance makes it a versatile and valuable addition to any electronic project.

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