The BAS16HT3G, manufactured by ON Semiconductor, is a high-speed switching diode that has been optimized for significant performance in a variety of electronic applications. This diode is known for its reliability and efficiency, making it a suitable choice for high-speed switching operations in modern electronic circuits.

Key Features

• High-Speed Switching: The BAS16HT3G is designed for very fast switching speeds, which is crucial for high-frequency applications.
• Low Capacitance: With its low capacitance, this diode is ideal for use in applications where minimal charge storage is preferred.
• Low Leakage Current: It exhibits a low leakage current, ensuring minimal power loss and enhancing overall efficiency.
• Surface Mount Package: The diode comes in a small SOD-323 package, which is suitable for surface-mounted design, saving valuable board space.
• High Breakdown Voltage: It has a high breakdown voltage of 100V, providing a good margin for safety in various applications.

Applications

The BAS16HT3G is versatile and can be used in a wide array of applications, including:

• High-speed switching in digital circuits
• Logic gates
• Power supply circuits
• Signal processing
• Protection circuits

Specifications

Parameter Value Package SOD-323 Maximum Repetitive Reverse Voltage (V<sub>RRM) 100 V Forward Continuous Current (I<sub>F) 200 mA Reverse Recovery Time (t<sub>rr) 6 ns Operating Junction Temperature Range -55°C to +150°C

In summary, the BAS16HT3G from ON Semiconductor is a high-quality, high-speed switching diode that offers excellent performance for a range of electronic applications. Its fast switching speed, low capacitance, and low leakage current, combined with a compact form factor, make it a valuable component for any design engineer's toolkit.