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AFGHL50T65SQDC

Part No AFGHL50T65SQDC
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 650V A / IGBT Field Stop 650 V 100 A 238 W Through Hole TO-247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tube
IGBT Type Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 100 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Power - Max 238 W
Switching Energy 131µJ (on) , 96µJ (off)
Input Type Standard
Gate Charge 94 nC
Td (on/off) @ 25°C 17.6ns/94.4ns
Test Condition 400V, 12.5A, 4.7Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number AFGHL50
Standard Package 30
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1339487-AFGHL50T65SQDC
Ultra Librarian 3D Model Ultra Librarian AFGHL50T65SQDC CAD Model

Description

Introducing the AFGHL50T65SQDC Silicon Carbide Power MOSFET

ON Semiconductor's AFGHL50T65SQDC is a state-of-the-art silicon carbide (SiC) power MOSFET designed to meet the demanding requirements of high-performance power electronics. This robust power device is a perfect choice for applications requiring high efficiency, fast switching, and exceptional thermal performance.

Key Features of AFGHL50T65SQDC

  • High Blocking Voltage: With a drain-to-source voltage (VDS) of 650V, this MOSFET can easily handle high voltage applications, providing reliable operation and enhanced power density.
  • Low On-Resistance: The device boasts an ultra-low on-resistance (RDS(on)) of just 50 mΩ, which significantly reduces conduction losses and improves overall efficiency.
  • Fast Switching Capability: The AFGHL50T65SQDC is engineered for rapid switching, reducing switching losses and enabling high-frequency operation, which is critical for power supplies and converters.
  • High-Temperature Performance: Its robust silicon carbide construction allows for reliable operation at elevated temperatures, making it suitable for demanding environments.

Advanced Construction and Reliability

The AFGHL50T65SQDC MOSFET is built using ON Semiconductor's advanced SiC technology, which provides superior ruggedness and reliability compared to traditional silicon devices. This technology allows for smaller system sizes due to its high thermal conductivity and reduced cooling requirements.

Applications

Thanks to its impressive specifications, the AFGHL50T65SQDC is ideal for a wide range of applications, including:

  • Electric vehicle (EV) charging stations
  • Solar inverters and photovoltaic systems
  • Uninterruptible power supplies (UPS)
  • High-efficiency power conversion systems
  • Motor drives and induction heating

Environmental and Safety Compliance

ON Semiconductor is committed to environmental stewardship and the AFGHL50T65SQDC is designed to comply with various international safety and environmental standards. This commitment ensures that customers are not only getting a high-performance product but also one that aligns with global sustainability goals.

In conclusion, the AFGHL50T65SQDC from ON Semiconductor is an exceptional choice for designers looking for a high-voltage, high-performance, and reliable SiC power MOSFET. Its advanced features enable it to deliver superior performance in a wide array of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $18.6269 $55.8807
7+ $15.2836 $106.9852
11+ $14.8060 $162.8660
14+ $14.3284 $200.5976
19+ $13.8508 $263.1652
25+ $12.4180 $310.4500
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Availability: 15,625 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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