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2V7002WT1G

Part No 2V7002WT1G
Manufacturer ON Semiconductor
Catalog FETs - Single
Description Small Signal MOSFET 60 V, 340 mA, Single, N.Channel, SC.70 | MOSFET N-CH 60V 310MA SC70-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 310mA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 1.6Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 0.7nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 24.5pF at 20V
Power Dissipation (Maximum) 280mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SC-70-3 (SOT323)
Manufacturer Package SC-70, SOT-323
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1127910-2V7002WT1G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2V7002WT1G CAD Model

Description

ON Semiconductor 2V7002WT1G - High-Performance P-Channel MOSFET

The ON Semiconductor 2V7002WT1G is a versatile and high-performance P-Channel MOSFET that is designed to meet a wide range of applications requiring efficient power management. This MOSFET is particularly suitable for load switch and power management functions in consumer electronics, portable devices, and industrial systems where space is at a premium and energy efficiency is critical.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, making it ideal for low-voltage applications and ensuring it can be driven by low-voltage control signals.
  • High Power Dissipation: With a power dissipation of 0.35W, the 2V7002WT1G is capable of handling a substantial amount of power, making it suitable for demanding applications.
  • Low On-Resistance: The MOSFET's low on-resistance (Rds(on)) minimizes conduction losses and improves overall efficiency, which is crucial for battery-powered devices.
  • Compact SOT-723 Package: The small surface-mount SOT-723 package allows for a compact footprint on PCBs, saving valuable board space in dense circuit designs.

Electrical Characteristics

The 2V7002WT1G boasts impressive electrical characteristics that include a drain-source voltage (Vds) of -20V, gate-source voltage (Vgs) of ±8V, and continuous drain current (Id) of -540mA. These specifications ensure that the MOSFET can handle a range of operating conditions with reliability and stability.

Applications

Due to its high efficiency and low power consumption, the 2V7002WT1G is an excellent choice for a variety of applications, including:

  • Power management circuits
  • Battery-powered devices
  • Load switches
  • DC/DC converters
  • Portable electronics such as smartphones and tablets

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the 2V7002WT1G is no exception. It is designed to meet rigorous industry standards, ensuring long-term reliability for products that incorporate this P-Channel MOSFET. The device is also RoHS compliant, adhering to environmental standards and regulations.

Overall, the ON Semiconductor 2V7002WT1G P-Channel MOSFET is an exceptional choice for designers looking for a high-performance, space-saving, and energy-efficient power management solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,180+ $0.0424 $50.0320
2,515+ $0.0398 $100.0970
3,910+ $0.0384 $150.1440
5,605+ $0.0357 $200.0985
7,270+ $0.0344 $250.0880
9,065+ $0.0331 $300.0515
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 143,000 pieces
MOQ: 1180 pcs
Order Increment : 1 pcs
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