ON Semiconductor 2SK1467-H-TD-E MOSFET
The ON Semiconductor 2SK1467-H-TD-E is a high-performance N-Channel MOSFET designed for a wide range of applications. This power MOSFET is an efficient solution for electronic designers looking for a device with low on-resistance, high switching speed, and superior thermal performance.
Key Features
- Low On-Resistance: The 2SK1467-H-TD-E features a very low on-resistance, which reduces conduction losses and improves overall efficiency in applications.
- High-Speed Switching: With its ability to switch at high speeds, this MOSFET is ideal for high-frequency applications, providing better performance in power conversion and regulation circuits.
- High Power and Current Handling: This device can handle high levels of power and current, making it suitable for demanding applications that require robust performance.
- Gate Charge Optimization: The optimized gate charge minimizes switching losses without compromising on the conduction losses, leading to improved total power efficiency.
- Enhanced Thermal Characteristics: The 2SK1467-H-TD-E is designed with superior thermal characteristics to ensure stable operation even under high temperature conditions.
Applications
The 2SK1467-H-TD-E MOSFET from ON Semiconductor is versatile and can be used in various applications including:
- Power Supply Units (PSUs)
- DC-DC Converters
- Motor Drives
- Automotive Applications
- Switching Regulators
- Power Management Solutions
Product Specifications
| Parameter |
Value |
| Drain-to-Source Voltage (VDS) |
60V |
| Continuous Drain Current (ID) |
50A |
| Power Dissipation (PD) |
45W |
| Operating Temperature Range |
-55°C to +150°C |
With its robust package and proven reliability, the ON Semiconductor 2SK1467-H-TD-E MOSFET is a solid choice for designers who require a high-quality component that delivers consistent performance.