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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Part Status Obsolete(EOL)
Transistor Type NPN
Current - Collector (Ic) (Maximum) 2A
Voltage - Collector Emitter Breakdown (Maximum) 50V
Vce Saturation (Maximum) @ Ib, Ic 400mV @ 50mA, 1A
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 140 @ 100mA, 2V
Power - Max 1W
Frequency - Transition 150MHz
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Package TO-226-3, TO-92-3 Long Body
Manufacturer Package 3-MP
Win Source Part Number 762776-2SD1207S
Family Name 2SD1207S
Introduction Date November 26, 2008
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SD1207S CAD Model

Description

ON Semiconductor 2SD1207S NPN Transistor Overview

The 2SD1207S from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile transistor is well-suited for power amplification and switching applications, offering a balance of good amplification and low saturation voltage, making it an ideal choice for designers looking for efficient performance in their circuits.

Key Features

  • High Current Capacity: The 2SD1207S can handle a collector current (Ic) of up to 1A, which is substantial for a wide array of applications, from driving motors to power management in consumer electronics.
  • Low Saturation Voltage: It provides excellent efficiency with a low Vce(sat) typically less than 0.5V, which helps to minimize power loss and heat dissipation during operation.
  • High Power Dissipation: With a power dissipation (Pc) of up to 900mW, this transistor can sustain moderate power levels, making it suitable for various medium-power applications.
  • Complementary PNP Type: The 2SD1207S has a complementary PNP type, which allows for push-pull configurations, a common design in audio amplifiers and other applications requiring a balanced approach to signal processing.
  • High Transition Frequency: A transition frequency (fT) of 120MHz enables the 2SD1207S to be used in high-speed switching applications and in the amplification of high-frequency signals.

Applications

The versatility of the 2SD1207S makes it suitable for a variety of applications, including:

  • Audio power amplifiers
  • Power management circuits
  • DC-DC converters
  • Motor control circuits
  • Switching regulators
  • Driver stages in high-fidelity amplifiers and sound systems

Robustness and Reliability

ON Semiconductor is known for its commitment to quality, and the 2SD1207S is no exception. It is designed to meet rigorous industry standards for performance and reliability, ensuring that it can withstand the demands of even the most challenging electrical environments.

In summary, the 2SD1207S NPN transistor from ON Semiconductor is a powerful, efficient, and reliable component suitable for a broad range of electronic applications. Its high current capacity, low saturation voltage, and high power dissipation make it a go-to choice for engineers and designers looking to enhance their circuit designs.

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