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Manufacturer ON Semiconductor
Win Source Part Number 1124162-2N6519
Manufacturer Homepage www.onsemi.com
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Ultra Librarian 3D Model Ultra Librarian 2N6519 CAD Model

Description

The 2N6519 is a high voltage transistor that is designed and manufactured by ON Semiconductor, a leader in semiconductor solutions. This transistor is part of the company's extensive range of bipolar junction transistors (BJTs), which are known for their reliability and performance in various electronic applications.

Key Features

  • Voltage Ratings: The 2N6519 is capable of withstanding high voltage, with a collector-emitter voltage (VCEO) rating of up to 350V, making it suitable for applications requiring high voltage operation.
  • Current Handling: This transistor can handle continuous collector currents (IC) up to 500 mA, which allows it to drive moderate loads in electronic circuits.
  • Power Dissipation: With a power dissipation (PD) of 625 mW, the 2N6519 can dissipate a fair amount of heat during operation, contributing to its durability and longevity.
  • TO-92 Package: Encased in the popular TO-92 package, the 2N6519 is easy to handle and integrate into a wide variety of electronic designs, thanks to its compact size and through-hole mounting style.

Applications

The 2N6519 is versatile and can be used in numerous applications, including:

  • Switching circuits
  • Linear amplification
  • High voltage applications
  • Commercial and industrial electronic equipment

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The 2N6519 is designed to meet or exceed the stringent requirements of the electronic industry, ensuring reliable performance in your application. The device also complies with the RoHS directive, making it an environmentally friendly choice for manufacturers concerned with sustainability.

Technical Support and Resources

ON Semiconductor provides comprehensive technical support and resources for the 2N6519, including detailed datasheets, application notes, and design guides. Engineers and designers can access these resources to facilitate the integration of the transistor into their designs and to ensure optimal performance.

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