The 2N4921G from ON Semiconductor is a robust bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device is part of ON Semiconductor's high-performance transistor lineup, offering a combination of reliability and efficiency for a wide range of electronic circuits.

Key Features

• Transistor Polarity: NPN - making it suitable for amplification of positive signals.
• Collector-Emitter Voltage (Vceo): 80V - providing a good voltage handling capability for various applications.
• Collector Current (Ic): 1A - capable of handling moderate current loads.
• Power Dissipation (Pd): 40 W - ensuring the transistor can dissipate a substantial amount of power without overheating.
• DC Current Gain (hFE): 30 to 240 at 150 mA - offering a broad range of current amplification possibilities.
• Operating Junction Temperature Range: -65°C to +150°C - suitable for use in a variety of environmental conditions.

Product Applications

The 2N4921G is versatile and can be used in various applications, including:

• Audio amplifiers and high-fidelity audio output stages.
• Driver stages in hi-fi amplifiers and television circuits.
• Regulatory circuits, such as voltage regulators and current limiters.
• Switching circuits for power management and relay replacements.
• Signal processing circuits requiring high linearity and low noise.

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the 2N4921G is no exception. The device is built to meet rigorous industry standards, ensuring high reliability and performance consistency. It is packaged in a TO-220 case, known for its durability and thermal efficiency, making it suitable for commercial-grade devices that require a robust physical construction.

Environmental Compliance

The 2N4921G complies with RoHS directives, indicating that it is manufactured with a focus on environmental safety by reducing the use of hazardous substances.