The PHP55N04LT is a high-performance TrenchMOS™ transistor designed by NXP Semiconductors, a leader in the field of advanced semiconductor solutions. This N-channel enhancement mode Field-Effect Transistor (FET) is part of NXP’s renowned TrenchMOS portfolio, which offers state-of-the-art power MOSFETs for a wide range of applications.
Key Features
- Low Threshold Voltage: The device features a low threshold voltage, which ensures low on-state resistance at low gate drive voltages, improving the efficiency of the application it is used in.
- High-Speed Switching: With its fast switching capabilities, the PHP55N04LT is ideal for high-frequency applications, reducing switching losses and improving overall performance.
- Robust TrenchMOS Technology: NXP's TrenchMOS technology provides superior performance in terms of switching speed, thermal characteristics, and reliability.
- High Power Efficiency: The MOSFET is designed for optimal power efficiency, which makes it suitable for power-intensive applications while minimizing energy loss.
- Low On-State Resistance: The low on-state resistance (R<sub>DS(on)) of the device reduces conduction losses, which is critical for maintaining efficiency in power conversion circuits.
Applications
The PHP55N04LT is versatile and can be used in a variety of applications, including:
- DC/DC converters
- Motor drives
- Power management systems
- Switching regulators
- Automotive applications
Product Specifications
Parameter
Value
Drain-Source Voltage (V<sub>DS)
40V
Continuous Drain Current (I<sub>D)
55A
Power Dissipation (P<sub>D)
110W
Operating Temperature Range
-55°C to +175°C
Package
TO-220
With its combination of efficiency, speed, and reliability, the PHP55N04LT MOSFET from NXP is an excellent choice for designers looking to optimize their power circuitry across a range of demanding applications.
