Product Overview: PH2625L 115 - NXP Semiconductors
The PH2625L 115 is a high-performance, low-power MOSFET designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This product is part of NXP's extensive portfolio of metal-oxide-semiconductor field-effect transistors (MOSFETs) that are engineered to deliver efficient power management and switching capabilities across a wide range of applications.
Key Features
- Low On-Resistance: The PH2625L 115 boasts a very low on-resistance, which translates to reduced conduction losses and improved efficiency in power conversion applications.
- High-Speed Switching: Designed for fast switching, this MOSFET enables high-frequency operation, which is essential for applications such as DC-DC converters, motor drives, and power supplies.
- Logic Level Gate Drive: The device can be driven directly by logic-level voltages, making it compatible with a wide range of microcontrollers and digital circuits without the need for additional level-shifting components.
- Thermal Management: The PH2625L 115 is encapsulated in a robust package that enhances thermal dissipation, ensuring reliable performance even under high-power operation.
Applications
The versatility of the PH2625L 115 allows it to be used in various applications, including but not limited to:
- Power management modules
- DC-DC converters
- Motor control systems
- LED lighting solutions
- Battery management systems
- Load switches
Product Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
25 V |
| Continuous Drain Current (ID) |
34 A |
| Power Dissipation (PD) |
43 W |
| RDS(on) |
8.7 mΩ |
With its combination of efficiency, speed, and logic level compatibility, the PH2625L 115 from NXP is a reliable choice for designers looking to optimize their power management systems with a high-quality, cost-effective MOSFET solution.