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MMDS20254HT1

Part No MMDS20254HT1
Manufacturer NXP / Nexperia
Catalog RF Misc ICs and Modules
Description IC MOD RF ALIGNMENT 2G 32QFN / RF IC Advanced Doherty Alignment Module Cellular 1.8GHz ~ 2.2GHz 32-QFN (6x6)
Sample
Rohs State rohs
ECAD Module
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Category RF and Wireless - RF Misc ICs and Modules
Mfr NXP USA Inc.
Package Tape & Reel
Function Advanced Doherty Alignment Module
Frequency 1.8GHz ~ 2.2GHz
RF Type Cellular
Mounting Type Surface Mount
Package / Case 32-VFQFN Exposed Pad
Supplier Device Package 32-QFN (6x6)
Base Product Number MMDS20254
Standard Package 1,000
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 5A991G
HTSUS 8542.39.0001
Win Source Part Number 1345967-MMDS20254HT1
Ultra Librarian 3D Model Ultra Librarian MMDS20254HT1 CAD Model

Description

The MMDS20254HT1 is a state-of-the-art RF Power LDMOS transistor designed and manufactured by NXP Semiconductors. This high-performance component is specifically engineered for use in a wide array of RF power applications, particularly those requiring high efficiency, such as broadcast transmitters, industrial, scientific, and medical (ISM) applications, as well as RF energy solutions.

Key Features

  • Advanced LDMOS Technology: The MMDS20254HT1 leverages NXP's latest LDMOS technology, providing exceptional performance with high gain, efficiency, and reliability.
  • High Power Output: With its robust design, this transistor is capable of delivering a high output power, making it suitable for demanding applications that require a strong RF signal.
  • Wide Frequency Range: It operates effectively across a broad frequency range, accommodating various communication and industrial frequencies with ease.
  • Thermal Performance: The device is encapsulated in a high thermal-conductivity package, ensuring excellent heat dissipation and stability under high temperature operations.
  • Integrated ESD Protection: The MMDS20254HT1 comes with built-in electrostatic discharge protection, safeguarding the device from unexpected voltage spikes.

Applications

The MMDS20254HT1's versatility allows it to be utilized in a multitude of applications. Its high power and efficiency make it an ideal choice for:

  • Broadcasting equipment, including FM radio and digital television transmitters.
  • Industrial heating, welding, and drying systems.
  • Medical equipment such as MRI and RF ablation tools.
  • Plasma generation and particle accelerators in scientific research.
  • Cooking and defrosting applications in the RF energy sector.

Product Specifications

Parameter Value Technology LDMOS Frequency Range Varies Power Output High Package High thermal conductivity ESD Protection Integrated

In conclusion, the MMDS20254HT1 from NXP is a powerful and reliable RF Power LDMOS transistor that offers exceptional performance for a range of high-efficiency applications. Its advanced technology and robust design make it a leading choice for professionals in the field.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $18.1099 $72.4396
8+ $14.8595 $118.8760
13+ $14.3950 $187.1350
17+ $13.9307 $236.8219
22+ $13.4664 $296.2608
29+ $12.0732 $350.1228
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Availability: 200 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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