The BUK9832-55A/CU,115 is a high-performance, TrenchMOS™ standard level FET from NXP Semiconductors, designed to deliver efficient power switching with a focus on energy savings and reliability. This N-channel enhancement mode Field Effect Transistor (FET) is a testament to NXP's commitment to providing advanced solutions for power management applications.
Key Features
- Low On-State Resistance: The device features an exceptionally low on-state resistance (RDS(on)), which minimizes conduction losses and improves overall efficiency.
- High-Speed Switching: Engineered for fast switching, the BUK9832-55A/CU,115 ensures that power conversion applications operate with high efficiency and minimal delay.
- Standard Level Gate Drive: This FET operates with standard level gate drives, making it compatible with a wide variety of control circuits and simplifying design integration.
- Robust Thermal Performance: Its excellent thermal characteristics ensure reliability and longevity even under high operating temperatures and demanding conditions.
Applications
The BUK9832-55A/CU,115 is ideal for a broad range of applications, including but not limited to:
- DC/DC converters
- Power management systems
- Motor drives
- Automotive applications
- Switching regulators
Product Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
55V |
| Continuous Drain Current (ID) |
75A |
| Power Dissipation (PD) |
200W |
| Operating Temperature Range |
-55°C to +175°C |
| Package |
LFPAK56, Power-SO8 |
The BUK9832-55A/CU,115 is available in a leadless package which is designed for surface mount technology, ensuring a compact footprint and ease of manufacturing. With its robust design and powerful performance, this FET from NXP Semiconductors is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems.