The NXP BUK763R9-60E is a high-performance Power MOSFET designed to meet the rigorous demands of modern electronic systems. This component is part of NXP's extensive portfolio of semiconductor solutions that are renowned for their reliability and efficiency.

Key Features

• Low On-State Resistance: The BUK763R9-60E boasts an exceptionally low on-state resistance (R_DS(on)), which enhances its efficiency by minimizing power loss during operation.
• High-Speed Switching: Designed for high-speed switching applications, this MOSFET enables quick transitions, thereby reducing switching losses and improving overall performance.
• Advanced TrenchMOS Technology: Utilizing NXP's cutting-edge TrenchMOS technology, the BUK763R9-60E offers superior gate charge characteristics, which contribute to its low switching energy and high-density power management.
• Robust Thermal Performance: With an excellent thermal design, this MOSFET can handle high temperatures without compromising its performance, making it suitable for demanding applications.
• High Continuous Current: It is capable of supporting a high continuous drain current, ensuring that it can manage heavy loads with ease.

Applications

The BUK763R9-60E is versatile and can be used in a wide range of applications, including:

• DC/DC converters
• Motor drives
• Power management systems
• Automotive applications
• Switching regulators

Product Specifications

The technical specifications of the BUK763R9-60E are as follows:

• Drain-source Voltage (V_DS): 60V
• Continuous Drain Current (I_D): 75A
• Power Dissipation (P_D): 110W
• Operating Temperature Range: -55°C to 175°C
• Package: LFPAK56 (Power-SO8)

The BUK763R9-60E is a testament to NXP's commitment to providing advanced solutions that empower the electronics industry. Whether it's for automotive, industrial, or consumer applications, this Power MOSFET is engineered to deliver exceptional performance and reliability.