The BUK7226-75A is a high-performance, N-channel TrenchMOS™ standard level Field-Effect Transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is specifically engineered to deliver exceptional performance in applications requiring efficient power conversion and control.

Key Features

• Low On-State Resistance: The BUK7226-75A boasts an ultra-low on-state resistance (R_DS(on)) of only 75 milliohms at a gate drive of 10V, which reduces conduction losses and improves overall efficiency.
• High Continuous Current: With a continuous drain current (I_D) of up to 75A, this MOSFET can handle high current loads, making it suitable for demanding power applications.
• Standard Level Gate Drive: The device is compatible with standard level gate drive voltages, which simplifies the design of the driving circuitry.
• Rugged Design: The BUK7226-75A is designed to withstand high energy pulses in the avalanche and commutation modes, ensuring reliability and robustness in harsh conditions.
• Fast Switching Performance: This MOSFET features fast switching characteristics, which reduces switching losses and improves performance in high-frequency applications.

Applications

The BUK7226-75A is suitable for a wide range of applications, including:

• DC/DC converters
• Motor drives
• Power management systems
• Automotive applications
• Switching regulators

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and reliability, and the BUK7226-75A is no exception. It is manufactured under stringent quality control standards and is designed to meet the rigorous demands of the automotive industry, among others. Its robust construction ensures long-term reliability, making it a trusted choice for engineers and designers across various sectors.

Environmental Compliance

The BUK7226-75A is compliant with RoHS and other environmental regulations, reflecting NXP's dedication to environmental sustainability and safe manufacturing practices.