The BUK205-50Y,118 is a high-performance, N-channel TrenchMOS™ standard level FET manufactured by NXP Semiconductors, a leader in the field of high-tech solutions. This field-effect transistor is designed to deliver efficient power management and conversion in a wide array of applications, making it a versatile component for modern electronic systems.

Key Features

• Device Type: Standard level N-channel MOSFET
• Package: The BUK205-50Y,118 comes in a TO-220AB package, which is known for its robustness and good thermal performance.
• Drain-Source Voltage (V_DS): It supports a drain-source voltage of up to 50V, making it suitable for mid-range voltage applications.
• Continuous Drain Current (I_D): The device can handle a continuous drain current of up to 34A, allowing it to drive high current loads with ease.
• R_DS(on): It has a low on-state resistance of typically 8.7 mΩ, which minimizes power loss and improves efficiency.
• Gate Charge (Q_g): Features a low gate charge, which enhances the switching performance and reduces switching losses.

Applications

The BUK205-50Y,118 is ideal for a range of applications, including:

• DC to DC converters
• Switch Mode Power Supplies (SMPS)
• Motor drives
• Battery management systems
• Automotive applications and load switches

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The BUK205-50Y,118 is no exception, and it has undergone rigorous testing to ensure its performance under various conditions. With its robust design and NXP's reputation for quality, this MOSFET is a reliable choice for designers looking to create efficient and durable systems.

Environmental Compliance

The BUK205-50Y,118 complies with various environmental standards, including RoHS and REACH. It is designed to meet current and future environmental regulations, making it an environmentally responsible choice for electronic designs.