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BU2725DX

Part No BU2725DX
Manufacturer NXP / Nexperia
Catalog END - OF - LIFE
Description Silicon Diffused Power Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 1155728-BU2725DX
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BU2725DX CAD Model

Description

Product Overview - NXP BU2725DX High-Power Transistor

The NXP BU2725DX represents a pinnacle in high-power, high-frequency transistor technology. Designed for broadcast transmitter applications, this robust silicon NPN power transistor is a testament to NXP's commitment to providing innovative solutions for the RF power market. The BU2725DX is specifically engineered to deliver outstanding performance in high-voltage environments, making it an ideal choice for applications such as professional broadcasting, industrial, scientific, and medical (ISM) applications.

Key Features

  • High Power Capability: The BU2725DX is capable of delivering a high output power, which is essential for broadcast transmitters that need to cover large areas.
  • High Operating Frequency: This transistor operates effectively at high frequencies, ensuring clear and reliable signal transmission for a variety of broadcasting applications.
  • Excellent Gain Performance: The device offers high gain, which translates to better signal amplification and overall efficiency in transmitter systems.
  • Robust Design: NXP's BU2725DX is built to withstand harsh conditions and provide reliable performance over a wide range of operating temperatures.
  • Diffused Emitter Ballasting Resistors: These integrated resistors provide excellent current sharing and withstand tough VSWR conditions.

Applications

The BU2725DX is not just limited to broadcast transmitters but is also well-suited for a variety of high-power RF applications. Its high reliability and efficiency make it an excellent choice for:

  • Industrial heating and drying systems
  • Medical diagnostics and treatment equipment
  • RF plasma lighting
  • Scientific research equipment

Technical Specifications

With a collector-emitter voltage (Vce) of 110V and a collector current (Ic) up to 25A, the BU2725DX can handle significant power levels. The transition frequency (Ft) is rated at 30MHz, and the power gain is high, making it an efficient amplifier for RF energy. Its rugged construction ensures a long operational lifespan, even in the most demanding conditions.

For those in need of a reliable and high-performing power transistor for their broadcasting or high-frequency applications, the NXP BU2725DX is a component that stands out for its exceptional quality and capability.

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