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BSP255

Part No BSP255
Manufacturer NXP / Nexperia
Catalog END - OF - LIFE
Description P-channel enhancement mode vertical D-MOS transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 1154836-BSP255
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSP255 CAD Model

Description

The BSP255 is a versatile and high-performance MOSFET from NXP Semiconductors, designed to meet a wide range of applications. This P-channel enhancement mode Field Effect Transistor is housed in a compact SOT223 surface-mounted package, making it suitable for automated assembly processes and saving valuable space on printed circuit boards.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, which ensures that it can be driven at lower gate voltages, making it suitable for low-voltage applications and compatible with modern microcontrollers.
  • High-Speed Switching: BSP255 offers high-speed switching characteristics, which is essential for efficient power management and reduces switching losses in high-frequency applications.
  • Low On-State Resistance: The low on-state resistance (RDS(on)) minimizes conduction losses and improves overall efficiency, which is crucial for power-sensitive designs.
  • Thermal Performance: The device's excellent thermal characteristics ensure reliable operation even under high current conditions, contributing to the longevity and durability of the end application.

Applications

The BSP255 is ideally suited for a range of applications, including:

  • Load switching
  • Battery management systems
  • Power management in portable devices
  • Motor control circuits
  • DC-DC converters

Quality and Reliability

NXP Semiconductors is renowned for its commitment to quality, and the BSP255 is no exception. It is manufactured to the highest standards to ensure consistent performance and reliability across various conditions. The device is also RoHS compliant, adhering to the latest environmental regulations and standards.

Technical Specifications

Parameter Value
Drain-source voltage (VDS) -60 V
Continuous drain current (ID) -3 A
Power dissipation (PD) 1.25 W
Operating temperature range -55°C to +150°C

With its robust design and powerful features, the BSP255 by NXP Semiconductors is an excellent choice for designers looking for a reliable P-channel MOSFET that delivers performance and efficiency.

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