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BLF6G20LS-110

Part No BLF6G20LS-110
Manufacturer NXP / Nexperia
Catalog END - OF - LIFE
Description Power LDMOS transistor
Sample
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ECAD Module
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Manufacturer NXP
Win Source Part Number 1153729-BLF6G20LS-110
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BLF6G20LS-110 CAD Model

Description

NXP BLF6G20LS-110 LDMOS Power Transistor

The NXP BLF6G20LS-110 is a cutting-edge LDMOS power transistor designed for a variety of RF power applications. This high-performance product is specifically engineered to deliver outstanding efficiency and reliability for applications operating within the 1800 MHz to 2000 MHz frequency range. The BLF6G20LS-110 is a testament to NXP's commitment to providing innovative solutions that cater to the demanding needs of RF power markets.

Key Features

  • Frequency Range: Optimized for performance between 1800 MHz and 2000 MHz, making it suitable for a wide array of RF applications.
  • Output Power: With a typical output power of 110 Watts, this transistor can handle significant power levels, ensuring robust operation in various systems.
  • High Efficiency: The BLF6G20LS-110 boasts an impressive efficiency, which minimizes power loss and enhances overall system performance.
  • Ruggedness: Engineered for durability, this device can withstand a high voltage standing wave ratio (VSWR), which is crucial for applications that may experience load mismatch.
  • Integrated ESD Protection: Features built-in electrostatic discharge protection, safeguarding the device from unexpected voltage spikes and enhancing its longevity.
  • Thermally Enhanced Package: Comes in a ceramic package that provides excellent thermal characteristics, ensuring reliable operation even under high-temperature conditions.

Applications

The BLF6G20LS-110 is ideally suited for a range of applications, including but not limited to:

  • Base station transmitters for mobile radio
  • Industrial, scientific, and medical (ISM) applications
  • Professional mobile radio (PMR)
  • RF energy applications

With its advanced LDMOS technology, the NXP BLF6G20LS-110 provides a perfect blend of performance and ruggedness. Whether for telecommunication infrastructure, industrial uses, or other professional RF applications, this power transistor is built to meet the highest standards of efficiency and reliability, making it an excellent choice for designers and engineers seeking to optimize their RF power solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $104.8873 $104.8873
2+ $101.5038 $203.0076
3+ $98.1204 $294.3612
4+ $87.9700 $351.8800
!
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Availability: 100 pieces
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