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BLF574

Part No BLF574
Manufacturer NXP / Nexperia
Catalog END - OF - LIFE
Description HF / VHF power LDMOS transistor
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer NXP
Win Source Part Number 1153706-BLF574
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BLF574 CAD Model

Description

The BLF574 from NXP Semiconductors is a high-performance RF power transistor designed to handle high power and high efficiency in a wide range of applications. This LDMOS transistor is specifically engineered for broadcast transmitters and industrial applications, making it an ideal choice for professionals looking for reliability and performance.

Key Features:

  • Frequency Range: The BLF574 operates effectively within the frequency range of 1 to 500 MHz, providing versatility for various RF applications.
  • High Power: With an impressive output power of up to 500 Watts, this transistor can handle demanding applications that require significant power levels.
  • High Efficiency: It boasts a high efficiency of up to 70%, reducing the thermal load and improving the overall system efficiency.
  • Robustness: The transistor is rugged and can withstand high VSWR (Voltage Standing Wave Ratio), ensuring durability and reliability even under challenging conditions.
  • Easy Integration: The BLF574 comes in a ceramic package that is easy to integrate into existing systems, simplifying the design and manufacturing process.

Applications:

  • Industrial, scientific, and medical (ISM) applications
  • Radio and VHF TV broadcast transmitters
  • Professional RF power amplifiers

Technical Specifications:

Parameter Value
Product Type RF Power Transistor
Technology LDMOS
Operating Frequency 1 - 500 MHz
Output Power 500 W
Efficiency Up to 70%
Package Ceramic

The BLF574 is not only a testament to NXP's commitment to quality but also an embodiment of cutting-edge RF power technology. Whether for industrial use or broadcast applications, the BLF574 stands out as a robust and efficient solution for high-power RF amplification needs.

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