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BGD885

Part No BGD885
Manufacturer NXP / Nexperia
Catalog Linear - Amplifiers - Video Amps and Modules
Description IC AMP GAIN PWR 860MHZ SFM9
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits
Manufacturer NXP
Packaging Bulk
Status Obsolete(EOL)
Applications CATV
Number of Circuits 1
Operating Supply Current 450mA
Mounting Chassis Mount
Case / Package SFM9
Win Source Part Number 049525-BGD885
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BGD885 CAD Model

Description

The BGD885 is a state-of-the-art RF power transistor from NXP Semiconductors, designed to deliver exceptional performance for a wide range of applications. This product is part of NXP's commitment to providing innovative solutions for RF energy technology, which is transforming the landscape of high-frequency power applications.

Key Features

  • High Efficiency: The BGD885 boasts an impressive efficiency rating, which is essential for minimizing thermal challenges and reducing energy consumption in high-power systems.
  • Wide Frequency Range: This transistor is capable of operating over a broad frequency spectrum, making it versatile for various applications, including but not limited to broadcast, industrial, medical, and scientific fields.
  • Robust Thermal Design: The BGD885 is engineered with a superior thermal design that ensures reliable operation even under strenuous conditions, contributing to a longer product lifespan.
  • High Gain: With its high power gain, this RF power transistor allows for greater signal amplification, enhancing overall system performance.

Applications

The BGD885 is well-suited for a range of high-frequency applications. Its versatility and reliability make it an excellent choice for:

  • Commercial and civilian broadcast transmitters
  • Industrial heating and plasma generation
  • Medical applications such as MRI and RF ablation
  • Scientific research in particle accelerators and fusion technology

Product Specifications

The BGD885 is built with the latest LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, which is renowned for its high power density and low parasitic capacitance. It operates efficiently at high voltages and can withstand significant load mismatch conditions. The product is packaged in a robust ceramic package that facilitates excellent heat dissipation and ensures mechanical stability.

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and reliability, and the BGD885 is no exception. It undergoes rigorous testing and quality assurance processes to meet the highest industry standards, ensuring that it performs consistently and reliably in the most demanding environments.

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