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BAT120A

Part No BAT120A
Manufacturer NXP / Nexperia
Catalog Diodes, Rectifiers - Arrays
Description Schottky barrier double diodes
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 1151486-BAT120A
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BAT120A CAD Model

Description

The NXP BAT120A is a state-of-the-art Schottky barrier diode, designed to offer efficient and reliable performance for a wide range of applications. This diode is known for its low forward voltage drop and high surge current capability, making it an ideal choice for high-frequency rectification and power regulation in compact electronic devices.

Key Features

  • Low Forward Voltage: The BAT120A boasts a low forward voltage drop, which enhances overall system efficiency by minimizing power losses during diode conduction.
  • High Surge Current Capability: It is capable of handling high surge currents, providing robust performance during transient conditions and ensuring the reliability of the electronic system.
  • Fast Switching Speed: With its fast switching action, the BAT120A is well-suited for high-frequency applications, contributing to reduced switching losses and improved circuit response times.
  • Low Leakage Current: The diode features a low reverse leakage current, which helps to maintain low power consumption when the diode is in the off-state.
  • Compact Packaging: Enclosed in a small SOD-128 package, the BAT120A is optimized for space-constrained designs, allowing for greater design flexibility and board space savings.

Applications

The BAT120A is versatile and can be used in a variety of applications, including:

  • Switching power supplies
  • DC-DC converters
  • Free-wheeling diodes in power management
  • Reverse polarity protection circuits
  • Automotive applications

Technical Specifications

Parameter Value
Package SOD-128
Maximum Repetitive Reverse Voltage (VRRM) 100 V
Forward Continuous Current (IF) 1 A
Forward Voltage Drop (VF) Typ. 0.87 V at IF = 1 A
Reverse Leakage Current (IR) Typ. 5 µA at VR = 100 V

In conclusion, the NXP BAT120A is a highly efficient and reliable Schottky barrier diode that is well-suited for modern electronic applications where performance and space economy are critical. Its superior electrical characteristics make it a top choice for designers and engineers looking for a diode with exceptional performance.

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