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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NTE
Package Bag
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V
Power - Max 625 mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 850896-BC337
Ultra Librarian 3D Model Ultra Librarian BC337 CAD Model

Description

The BC337 is a NPN bipolar transistor designed for general-purpose amplifier and switching applications.

  • Application: Amplifier, Switching
  • Power Dissipation: 625 mW (Max)
  • Voltage Collector-Emitter Breakdown: 45 V
  • Collector Current: 800 mA (Max)
  • Transistor Type: NPN
  • Vce Saturation: 700mV @ 50mA and 500mA
  • Collector Cutoff Current: 100nA
  • DC Current Gain: 100 @ 100mA and 1V
  • Frequency Transition: 100MHz
  • Mounting: Through-Hole
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Operating Temperature: -40°C to 150°C (TJ)

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