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APT13003DZTR-G1

Part No APT13003DZTR-G1
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR | TRANS NPN 450V 1.5A TO92
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Cut Tape (CT)
Transistor Type NPN
Current - Collector (Ic) (Maximum) 1.5A
Voltage - Collector Emitter Breakdown (Maximum) 450V
Vce Saturation (Maximum) at Ib, Ic 400mV at 250mA, 1A
DC Current Gain (hFE) (Minimum) at Ic, Vce 5 at 1A, 2V
Maximum Power 1.1W
Frequency - Transition 4MHz
Temperature Range - Operating -65°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1146613-APT13003DZTR-G1
Manufacturer Homepage www.bcdsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian APT13003DZTR-G1 CAD Model

Description

Introducing the APT13003DZTR-G1 from Diodes Incorporated

The APT13003DZTR-G1 is a state-of-the-art bipolar junction transistor (BJT) developed by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This NPN transistor is designed for use in various electronic applications, offering high efficiency and reliability.

With its compact SOT-89 package, the APT13003DZTR-G1 is optimized for space-saving on printed circuit boards (PCBs), making it an ideal choice for modern electronic devices where real estate is at a premium. This package is not only small but also provides excellent power dissipation capabilities, allowing the device to handle significant power levels without compromising performance.

The APT13003DZTR-G1 boasts a collector-emitter voltage (Vceo) of 400V, which provides a wide safety margin for applications that experience high voltage transients. This feature ensures the longevity and reliability of the device in harsh electrical environments. Additionally, the transistor has a collector current (Ic) rating of 1.5A, making it suitable for driving medium-power circuits.

The device's high gain bandwidth product further enhances its performance in amplification applications, ensuring that signals are amplified with minimal distortion. This characteristic makes the APT13003DZTR-G1 an excellent choice for audio amplifiers, power management circuits, and switch-mode power supplies.

Moreover, the APT13003DZTR-G1 incorporates innovative design features that reduce the risk of secondary breakdown, a common failure mode in transistors. This enhancement improves the overall robustness of the device, allowing it to operate reliably even under stressful conditions such as high temperature and overcurrent situations.

Diodes Incorporated has a reputation for producing high-quality components that meet the stringent requirements of the electronics industry. The APT13003DZTR-G1 is no exception, with its superior electrical characteristics and robust design, it stands out as a top choice for designers looking to incorporate a reliable NPN transistor into their circuits.

For detailed specifications, application notes, and further information, customers are encouraged to visit the official Diodes Incorporated website or contact their local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3768 $61.9560
105+ $1.1296 $118.6080
160+ $1.0938 $175.0080
220+ $1.0591 $233.0020
285+ $1.0233 $291.6405
380+ $0.9182 $348.9160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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