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Same model may have multiple batches, images only for reference.
PUMD2/DG/B4F Real Image
Same model may have multiple batches, images only for reference.

PUMD2/DG/B4F

Part No PUMD2/DG/B4F
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS 1NPN 1PNP 6TSSOP / Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz, 180MHz 300mW Surface Mount 6-TSSOP
Datasheet
PUMD2/DG/B4F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Nexperia USA Inc.
Package Tape & Reel (TR)
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22kOhms
Resistor - Emitter Base (R2) 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA
Frequency - Transition 230MHz, 180MHz
Power - Max 300mW
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP
Base Product Number PUMD2
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 934069964135
Standard Package 10,000
Win Source Part Number 979638-PUMD2/DG/B4F
Ultra Librarian 3D Model Ultra Librarian PUMD2/DG/B4F CAD Model

Description

The Nexperia USA Inc. PUMD2/DG/B4F is a pre-biased dual transistor array that belongs to the Transistors - Bipolar (BJT) - Arrays, Pre-Biased category of electronic components.

  • Category: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Application: High-Performance Switching
  • Common Applications: Power Supplies, Audio Amplifiers, High-Frequency Circuits
  • Maximum Power: 300mW
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 100mA
  • Package: 6-TSSOP
  • RoHS Compliant: Yes

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