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Same model may have multiple batches, images only for reference.
PSMN2R4-30MLDX Real Image
Same model may have multiple batches, images only for reference.

PSMN2R4-30MLDX

Part No PSMN2R4-30MLDX
Manufacturer Nexperia USA Inc.
Catalog FETs - Single
Description MOSFET N-CH 30V 70A LFPAK33
Datasheet
PSMN2R4-30MLDX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 70A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 2.4mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.2V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 51nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3264pF at 15V
Power Dissipation (Maximum) 91W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package LFPAK33
Manufacturer Package SOT-1210, 8-LFPAK33
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 733488-PSMN2R4-30MLDX
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN2R4-30MLDX CAD Model

Description

The PSMN2R4-30MLDX is an N-channel MOSFET from Nexperia USA Inc..

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 70A
  • Rds On (Maximum) @ Id, Vgs: 2.4mOhm @ 25A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Maximum) @ Vgs: 51nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 3264pF @ 15V
  • Package: Reel
  • Mounting: SMD
  • Maximum Power Dissipation: 91W
  • Operating Temperature: -55°C to 175°C
  • Applications: Power management and battery protection

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Quantity Unit Price Ext. Price
60+ $0.8732 $52.3920
140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
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