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Same model may have multiple batches, images only for reference.
PMV20XNER Real Image
Same model may have multiple batches, images only for reference.

PMV20XNER

Part No PMV20XNER
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V SOT23
Datasheet
PMV20XNER Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 18.6nC @ 4.5V
Max Input Capacitance 1150pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 510mW (Ta), 6.94W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 5.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1089778-PMV20XNER
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMV20XNER CAD Model

Description

The Nexperia USA Inc. PMV20XNER is an N-channel MOSFET.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 5.7A (Ta) @ 25°C
  • Maximum Rds On: 23 mOhm @ 5.7A, 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Gate Charge: 18.6nC @ 4.5V
  • Use: discrete semiconductor products
  • Mounting: SMD (SMT) technology
  • Power Dissipation: 510mW (Ta), 6.94W (Tc)
  • Package: TO-236AB (SOT23)
  • Market Status: popular
  • Supply and Demand Status: sufficient

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