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PMPB10ENZ

Part No PMPB10ENZ
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10A DFN2020MD-6 / N-Channel 30 V 10A (Ta) 1.8W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 15 V
Power Dissipation (Max) 1.8W (Ta), 12.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DFN2020MD-6
Package / Case 6-UDFN Exposed Pad
Base Product Number PMPB10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 934660554184
Standard Package 3,000
Win Source Part Number 971218-PMPB10ENZ
Ultra Librarian 3D Model Ultra Librarian PMPB10ENZ CAD Model

Description

The PMPB10ENZ is an N-channel MOSFET transistor from Nexperia USA Inc.

  • Packaging: Tape and Reel
  • Standard Package: 3,000
  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 10A @ 25°C
  • Maximum On-Resistance: 12mOhm @ 9A and 10V
  • Gate-Source Threshold Voltage: 2V @ 250µA
  • Power Dissipation: 1.8W @ Ta and 12.5W @ Tc
  • Gate Charge: 20.6 nC @ 10V
  • Input Capacitance: 840 pF @ 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
300+ $0.1938 $58.1400
730+ $0.1591 $116.1430
1,125+ $0.1541 $173.3625
1,550+ $0.1491 $231.1050
2,005+ $0.1441 $288.9205
2,685+ $0.1293 $347.1705
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,280 pieces
MOQ: 300 pcs
Order Increment : 1 pcs
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