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Same model may have multiple batches, images only for reference.
PDTD114ETR Real Image
Same model may have multiple batches, images only for reference.

PDTD114ETR

Part No PDTD114ETR
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS PREBIAS NPN 0.425W / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 225 MHz 320 mW Surface Mount TO-236AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Nexperia USA Inc.
Package Tape & Reel
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 225 MHz
Power - Max 320 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB
Base Product Number PDTD114
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 1727-7552-2,1727-7552-1,1727-7552-6,934031040215,PDTD114ETR-ND
Standard Package 3,000
Win Source Part Number 1112033-PDTD114ETR
Ultra Librarian 3D Model Ultra Librarian PDTD114ETR CAD Model

Description

The Nexperia PDTD114ETR is a pre-biased NPN transistor with a power rating of 320 mW.

  • Power - Max: 320 mW
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Current - Collector (Ic) (Max): 500 mA
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Frequency - Transition: 225 MHz
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
  • Operating Temperature: -40°C to 150°C

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