The RD11M, manufactured by NEC, is a VHF power MOS FET transistor. It is designed for high-power amplification in the VHF frequency range, typically found in communication systems, radio transmitters, and industrial applications. The RD11M utilizes MOS FET technology to achieve high gain, efficiency, and linearity. Its robust construction and optimized design make it suitable for demanding operating conditions.

Applications

• VHF power amplifiers in radio communication systems
• Mobile radio transmitters
• Base station amplifiers
• Industrial heating equipment
• Amateur radio amplifiers

Features

• High power gain
• High efficiency
• Excellent linearity
• MOS FET structure
• Low distortion
• High input impedance
• RoHS compliant

Benefits

• Enables efficient and high-performance VHF power amplifiers
• Reduces power consumption in communication systems
• Improves signal quality due to low distortion
• Simplifies amplifier design
• Increases system reliability

Technical Specifications

The RD11M operates within the VHF frequency range, commonly spanning from 30 MHz to 300 MHz. It is engineered to deliver a power output of approximately 11 Watts, although this value can vary slightly based on specific operating conditions and circuit configuration. The device typically operates at a voltage supply of 12.5V. A high power gain is a key characteristic, generally exceeding 10 dB, facilitating efficient signal amplification. Input impedance is optimized for ease of integration. The operating temperature range extends from -30°C to +85°C. The device package is designed to provide efficient heat dissipation, ensuring consistent performance even under high power loads. The MOS FET structure ensures high efficiency and minimal distortion, contributing to overall signal integrity. It is suitable as a replacement for other VHF power transistors, offering a blend of performance and reliability. Effective heat sinking is crucial for maintaining the device's performance and longevity.