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2SK3230-T1(J3J5L)

Part No 2SK3230-T1(J3J5L)
Manufacturer NEC
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 11+
Reference case SOT-323
Manufacturer NEC
Manufacturer Homepage www.nec.com
Win Source Part Number 751293-2SK3230-T1(J3J5L)
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK3230-T1(J3J5L) CAD Model

Description

The 2SK3230-T1(J3J5L) is a silicon N-channel power MOSFET manufactured by NEC. This device is designed for high-speed switching applications and power amplification circuits. Its key features make it suitable for various electronic devices requiring efficient power management.

Applications

  • Switching Regulators
  • DC-DC Converters
  • Motor Control Circuits
  • High-Frequency Inverters
  • Power Amplifiers

Features

  • N-Channel MOSFET
  • High-Speed Switching
  • Low On-Resistance (Rds(on))
  • High Avalanche Capability
  • Gate-Source Voltage (Vgs) rating: ±20V
  • Drain-Source Voltage (Vds) rating: 60V
  • Continuous Drain Current (Id): 7A

Benefits

  • Efficient Power Conversion: The low on-resistance minimizes power loss during switching, leading to higher efficiency in power conversion applications.
  • Fast Switching Speed: Enables high-frequency operation in switching regulators and inverters, reducing the size and cost of passive components.
  • Robustness: The high avalanche capability provides tolerance against voltage spikes, enhancing the reliability of the circuit.
  • Simplified Circuit Design: Easy to implement in various circuit configurations due to its standard N-channel MOSFET characteristics.
  • Improved Thermal Performance: Reduced power dissipation contributes to lower operating temperatures, increasing the lifespan of the device and surrounding components.

Technical Specifications

The 2SK3230-T1(J3J5L) typically comes in a small surface mount package, aiding in compact design. Important parameters include the drain-source breakdown voltage (Vdss), gate threshold voltage (Vgs(th)), and total gate charge (Qg). Consult the datasheet for precise electrical characteristics, thermal resistance, and packaging details.

This MOSFET is generally used in applications where energy efficiency and quick response times are important. Its performance characteristics provide a cost-effective solution for intermediate power switching and amplification needs. It's crucial to review the datasheet and application notes from NEC to ensure proper device selection and implementation for your specific requirements. Proper thermal management techniques, such as heat sinking, may be required depending on the operating conditions.

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