The 2SB806 is a silicon PNP epitaxial transistor manufactured by NEC. It is primarily designed for use in audio frequency power amplifier applications and switching applications.
Applications:
- Audio Amplifiers: Used in the output stages of audio amplifiers to deliver power to speakers.
- Switching Circuits: Suitable for use in switching circuits that require a moderate current and voltage handling capability.
- DC-DC Converters: Can be used in DC-DC converters to switch current to regulate voltage output.
- Power Supplies: Employed in linear power supplies for voltage regulation and current amplification.
Features:
- High Collector Current (Ic): Capable of handling collector currents up to -3A.
- High Collector-Emitter Voltage (Vceo): Rated for collector-emitter voltages up to -50V.
- Low Saturation Voltage: Exhibits a low saturation voltage, which helps to minimize power loss in switching applications.
- High Power Dissipation: Offers a power dissipation rating suitable for audio amplifier applications.
Benefits:
- Efficient Amplification: The transistor provides efficient audio amplification due to its low saturation voltage and high gain.
- Reliable Switching: The high collector current and voltage ratings ensure reliable performance in switching circuits.
- Reduced Power Loss: The low saturation voltage minimizes power loss, resulting in improved energy efficiency.
- Compact Design: Enables the development of compact audio amplifier and power supply designs.
Technical Specifications:
- Collector-Base Voltage (VCBO): -60V
- Collector-Emitter Voltage (VCEO): -50V
- Emitter-Base Voltage (VEBO): -5V
- Collector Current (IC): -3A
- Collector Dissipation (PC): 1.2W
- HFE: 80 - 240
- Operating and Storage Junction Temperature Range: -55 to +150 °C
The 2SB806 is typically available in a TO-126 package, facilitating easy mounting and thermal management.