The MMBT4917 is a silicon epitaxial planar NPN transistor in a SOT-23 plastic package. It is designed for high-voltage, high-speed switching applications. This device is manufactured by Texas Instruments (TI), formerly National Semiconductor.

Applications

• High-voltage switching circuits
• High-speed switching circuits
• Driver stages in amplifiers
• General purpose amplification

Features

• High breakdown voltage (VCBO = 100V)
• Low collector-emitter saturation voltage
• High switching speed
• Small SOT-23 package

Benefits

• Efficient switching performance in high-voltage applications.
• Minimized power dissipation due to low saturation voltage.
• Suitable for fast switching circuits.
• Space-saving design for compact electronic devices.

Additional Details

Technical Specifications:

• Collector-Base Voltage (VCBO): 100V
• Collector-Emitter Voltage (VCEO): 80V
• Emitter-Base Voltage (VEBO): 6V
• Collector Current (IC): 0.5A
• Power Dissipation (PD): 0.35W
• Operating and Storage Junction Temperature Range: -55°C to +150°C

The SOT-23 package makes the MMBT4917 suitable for automated assembly processes. The device is RoHS compliant.