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RT1P436U-T111-1

Part No RT1P436U-T111-1
Manufacturer Mitsubishi
Catalog HOT - SALES and EOL Components (Q - R)
Sample
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Manufacturer Mitsubishi
Win Source Part Number 299870-RT1P436U-T111-1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RT1P436U-T111-1 CAD Model

Description

The RT1P436U-T111-1 is a power MOSFET manufactured by Mitsubishi Electric. It is designed for high-efficiency switching applications, offering a balance of low on-resistance and fast switching speeds. This MOSFET finds use in power supplies, DC-DC converters, and motor control circuits where efficient power conversion is critical.

Applications:

  • Power Supplies
  • DC-DC Converters
  • Motor Control Circuits
  • Uninterruptible Power Supplies (UPS)
  • Inverters

Features:

  • Low on-resistance (Rds(on)) minimizes conduction losses and improves efficiency
  • Fast switching speed reduces switching losses, enabling high-frequency operation
  • Optimized gate charge for efficient switching performance
  • Avalanche rated for robust performance under transient conditions
  • Surface Mount Device (SMD) package for automated assembly

Benefits:

  • Enhanced system efficiency due to minimal conduction losses
  • Reduced heat dissipation leading to smaller heat sink requirements
  • Increased system reliability with avalanche rating
  • Improved switching performance due to fast switching speed and optimized gate charge
  • Compact design suitable for space-constrained applications

Technical Specifications:

While specific values for parameters like drain-source voltage (Vds), gate-source voltage (Vgs), drain current (Id), and on-resistance (Rds(on)) depend on the precise model and operating conditions, the RT1P436U series generally boasts low Rds(on) values, crucial for efficient power conversion. Refer to the official Mitsubishi Electric datasheet for detailed electrical characteristics, thermal resistance data, and package dimensions. The datasheet offers essential information for ensuring the safe and optimal use of the MOSFET.

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