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MRF581G

Part No MRF581G
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | RF TRANS NPN 18V 5GHZ MICRO X
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Maximum) 18V
Frequency - Transition 5GHz
Noise Figure (dB Typ at f) 3dB ~ 3.5dB at 500MHz
Gain 13dB ~ 15.5dB
Maximum Power 1.25W
DC Current Gain (hFE) (Minimum) at Ic, Vce 50 at 50mA, 5V
Current - Collector (Ic) (Maximum) 200mA
Temperature Range - Operating 150°C
Mounting Style SMD
Manufacturer Package Micro-X ceramic (84C)
Supplier Device Package Micro-X ceramic (84C)
Family Part Number MRF581
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 711364-MRF581G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MRF581G CAD Model

Description

The MRF581G is a discrete semiconductor product manufactured by Microsemi Corporation.

  • Popularity: Medium
  • Supply and Demand Status: balance
  • Application: high gain and frequency transition of 5GHz
  • Transistor Type: NPN
  • Mount: Surface Mount
  • Supplier Device Package: Micro-X ceramic (84C)
  • Maximum Power: 1.25W
  • Noise Figure: 3dB ~ 3.5dB @ 500MHz

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