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JANTXV2N6798

Name: JANTXV2N6798
Brand: Microsemi Corporation
SKU: 608876
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	JANTXV2N6798
Manufacturer	Microsemi Corporation
Catalog	FETs - Single
Description	POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=5.5A) \| MOSFET N-CH
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Microsemi Corporation
Packaging	Bulk
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	200V
Id - Continuous Drain Current	5.5A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	420mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	42.07nC at 10V
Gate Source Voltage (Maximum)	±20V
Power Dissipation (Maximum)	800mW, 25W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-205AF (TO-39)
Manufacturer Package	TO-205AF Metal Can
Manufacturer Pack Quantity	1
MSL Level	1 (Unlimited)
Win Source Part Number	1191564-JANTXV2N6798
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian JANTXV2N6798 CAD Model

Alternative Products

Description

The 1191564-JANTXV2N6798 is a through-hole MOSFET transistor that belongs to the Discrete Semiconductor Products category manufactured by Microsemi Corporation.

Popularity: Medium
Supply and demand status: Limited
Maximum Power Dissipation: 800mW, 25W
Vds - Drain-Source Breakdown Voltage: 200V
Supplier Device Package: TO-205AF (TO-39)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
1+	$87.5883	$87.5883
2+	$71.8676	$143.7352
3+	$69.6211	$208.8633
4+	$67.3758	$269.5032
5+	$65.1293	$325.6465
6+	$58.3922	$350.3532

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 3,571 pieces

Order Increment : 1 pcs

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JANTXV2N6798

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