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JANTXV1N5806US

Part No JANTXV1N5806US
Manufacturer Microsemi Corporation
Catalog Diodes, Rectifiers - Single
Description MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP | DIODE GEN PURP 150V 1A D5A
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Diode Type Standard
Voltage - DC Reverse (Vr) (Maximum) 150V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Maximum) at If 875mV at 1A
Speed Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) 25ns
Current - Reverse Leakage at Vr 1μA at 150V
Capacitance at Vr, F 25pF at 10V, 1MHz
Mounting Style SMD
Manufacturer Package SQ-MELF, A
Supplier Device Package D-5A
Operating Temperature - Junction -65°C ~ 175°C
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191553-JANTXV1N5806US
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTXV1N5806US CAD Model

Description

The Microsemi Corporation JANTXV1N5806US is a fast recovery diode that has a current average rectified (Io) of 1A and a reverse recovery time (trr) of 25ns.

  • Voltage DC Reverse (Vr) (maximum): 150V
  • Voltage Forward (Vf) (maximum) @ If: 875mV @ 1A
  • Temperature Range: -65°C to 175°C
  • Capacitance @ Vr, F: 25pF @ 10V, 1MHz
  • Package: D-5A
  • Popularity: Medium
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.2965 $65.1860
9+ $13.3716 $120.3444
14+ $12.9537 $181.3518
19+ $12.5358 $238.1802
24+ $12.1180 $290.8320
32+ $10.8644 $347.6608
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 730 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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