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Same model may have multiple batches, images only for reference.
JANTX2N7236 Microsemi Corporation
Same model may have multiple batches, images only for reference.

JANTX2N7236

Part No JANTX2N7236
Manufacturer Microsemi Corporation
Catalog FETs - Single
Description POWER MOSFET THRU-HOLE (TO-254AA) | MOSFET P-CH 100V 18A
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 18A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 220mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 60nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 4W, 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-254AA
Manufacturer Package TO-254-3, TO-254AA (Straight Leads)
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 718804-JANTX2N7236
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTX2N7236 CAD Model

Description

The JANTX2N7236 is a P-Channel MOSFET manufactured by Microsemi Corporation.

  • Package: TO-254AA
  • Mounting: Through-hole
  • Maximum Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 18A
  • Maximum Rds On: 220mOhm @ 18A, 10V
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Maximum Gate Charge: 60nC @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C to 150°C
  • Power Dissipation: 4W, 125W

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