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Same model may have multiple batches, images only for reference.
JANTX2N6800 Real Image
Same model may have multiple batches, images only for reference.

JANTX2N6800

Part No JANTX2N6800
Manufacturer Microsemi Corporation
Catalog FETs - Single
Description POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.0ohm, Id=3.0A) | MOSFET N-CH
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 400V
Id - Continuous Drain Current 3A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.1Ohm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 34.75nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 800mW, 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-205AF (TO-39)
Manufacturer Package TO-205AD, TO-39-3 Metal Can
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191528-JANTX2N6800
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTX2N6800 CAD Model

Description

The JANTX2N6800 is an N-channel MOSFET transistor with a maximum drain-source breakdown voltage of 400V and a continuous drain current of 3A.

  • Manufacturer: Microsemi Corporation
  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current: 3A
  • Gate-Source Voltage: ±20V
  • Gate-Source Voltage(th): 4V @ 250μA
  • Power Dissipation (Maximum): 800mW, 25W
  • Rds On (maximum) at Id, Vgs: 1.1Ohm @ 3A, 10V
  • Packaging: Bulk
  • Status: Limited supply and demand status with a medium popularity
  • MSL Level: 1 (Unlimited)
  • Manufacturer Homepage: www.irf.com

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