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APT75GN60LDQ3G

Part No APT75GN60LDQ3G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 155A 536W TO264
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 155A
Pulsed Collector Current 225A
Collector-emitter saturation voltage(Max) 1.85V @ 15V, 75A
Maximum Power Dissipation 536W
Total Switching Energy(Ets) 2500μJ (on), 2140μJ (off)
Input Type Standard
Gate Charge 485nC
Turn-on and Turn-off delay time 47ns/385ns
Testing Conditions 400V, 75A, 1 Ohm, 15V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-264 [L]
Win Source Part Number 1018115-APT75GN60LDQ3G
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT75GN60LDQ3G CAD Model

Description

The Microsemi Corporation 1018115-APT75GN60LDQ3G is a through-hole mounted trench field stop IGBT with a maximum collector-emitter breakdown voltage of 600V and a maximum current collector of 155A.

  • Collector-Emitter Breakdown Voltage: 600V
  • Current Collector: 155A
  • Gate Charge: 485nC
  • Collector-Emitter Saturation Voltage: 1.85V @ 15V, 75A
  • Total Switching Energy (On): 2500μJ
  • Total Switching Energy (Off): 2140μJ
  • Turn-On Delay Time: 47ns
  • Turn-Off Delay Time: 385ns
  • Operating Temperature Range: -55°C to 175°C

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