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Same model may have multiple batches, images only for reference.
APT45GP120BG Real Image
Same model may have multiple batches, images only for reference.

APT45GP120BG

Part No APT45GP120BG
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description Power Semiconductors Power Modules
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 7
Packaging Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 100A
Current - Collector Pulsed (Icm) 170A
Vce(on) (Maximum) @ Vge, Ic 3.9V @ 15V, 45A
Power - Max 625W
Switching Energy 900μJ (on), 904μJ (off)
Input Type Standard
Gate Charge 185nC
Td (on/off) @ 25°C 18ns/102ns
Test Condition 600V, 45A, 5 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247 [B]
RoHS State Request Verification
Win Source Part Number 1146784-APT45GP120BG
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT45GP120B
Introduction Date August 27, 2002
ECCN EAR99
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian APT45GP120BG CAD Model

Description

The Microsemi Corporation APT45GP120BG is a medium-popularity IGBT type device that belongs to the POWER MOS 7 series.

  • Maximum Power: 625W
  • Collector-Emitter Breakdown Voltage: 1200V
  • Package: TO-247-3
  • Current Collector (Ic) Maximum: 100A
  • Switching Energy (on): 900μJ
  • Switching Energy (off): 904μJ
  • Gate Charge: 185nC

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3+ $25.2725 $75.8175
6+ $20.7364 $124.4184
9+ $20.0885 $180.7965
12+ $19.4404 $233.2848
16+ $18.7925 $300.6800
21+ $16.8484 $353.8164
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