The APT40SM120B transistor manufactured by Microsemi Corporation is a N-Channel SiCFET (Silicon Carbide).

• Drain to Source Voltage (Vdss): 1200V
• Drive Voltage (Max Rds On, Min Rds On): 20V
• FET Type: N-Channel
• Maximum Rds On @ Id, Vgs: 100mOhm @ 20A, 20V
• Gate Charge (Qg) (Maximum) @ Vgs: 130nC @ 20V
• Input Capacitance (Ciss) (Maximum) @ Vds: 2560pF @ 1000V
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Power Dissipation (Maximum): 273W (Tc)
• Continuous Drain Current (Id) @ 25°C: 41A (Tc)
• Product Status: Obsolete (End of Life)
• Supply and Demand Status: Limited
• MSL Level: 1 (Unlimited)