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Same model may have multiple batches, images only for reference.
APT31M100L Real Image
Same model may have multiple batches, images only for reference.

APT31M100L

Part No APT31M100L
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFET
Datasheet
APT31M100L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 260nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 8500pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1040W (Tc)
Rds On (Maximum) @ Id, Vgs 400 mOhm @ 16A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-264
Package TO-264-3, TO-264AA
Win Source Part Number 1146750-APT31M100L
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT31M100L
Introduction Date January 09, 2006
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT31M100L CAD Model

Description

The Microsemi APT31M100L is a medium popularity, limited supply and demand power MOSFET designed for use in discrete semiconductor products.

  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Product Type: Power MOSFET
  • Series: POWER MOS 8
  • Maximum Power Dissipation: 1040W @ Tc
  • Operating Temperature Range: -55°C to 150°C
  • Drive Voltage: 10V
  • Drain Source Voltage: 1000V
  • Manufacturer: Microsemi Corporation

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