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Same model may have multiple batches, images only for reference.
APT30SCD65B Microsemi Corporation
Same model may have multiple batches, images only for reference.

APT30SCD65B

Part No APT30SCD65B
Manufacturer Microsemi Corporation
Catalog Diodes, Rectifiers - Single
Description DIODE SIC 650V 46A TO247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Microsemi Corporation
Packaging Bulk
Part Status Obsolete (End Of Life)
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Maximum) 650V
Current - Average Rectified (Io) 46A
Voltage - Forward (Vf) (Maximum) at If 1.8V at 30A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage at Vr 600μA at 650V
Capacitance at Vr, F 945pF at 1V, 1MHz
Mounting Style Through Hole
Manufacturer Package TO-247-2
Supplier Device Package TO-247
Operating Temperature - Junction -55°C ~ 150°C
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 810078-APT30SCD65B
Ultra Librarian 3D Model Ultra Librarian APT30SCD65B CAD Model

Description

The Microsemi Corporation 810078-APT30SCD65B is a silicon carbide Schottky diode that has a voltage rating of 650V and a current rating of 46A. The maximum forward voltage of this diode is 1.8V at 30A and the reverse leakage current is 600μA at 650V. The Microsemi Corporation diode has a voltage rating of 650V and a current rating of 46A.

  • Voltage Rating: 650V
  • Current Rating: 46A
  • Maximum Forward Voltage: 1.8V @ 30A
  • Reverse Leakage Current: 600μA @ 650V
  • Capacitance: 945pF @ 1V, 1MHz
  • Operating Temperature Range: -55°C to 150°C
  • Manufacturer Pack Quantity: 1

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