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Same model may have multiple batches, images only for reference.
APT30GP60BDQ1 Real Image
Same model may have multiple batches, images only for reference.

APT30GP60BDQ1

Part No APT30GP60BDQ1
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 100A 463W TO247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Not For New Designs
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 100A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 30A
Maximum Power Dissipation 463W
Total Switching Energy(Ets) 260μJ (on), 250μJ (off)
Input Type Standard
Gate Charge 90nC
Turn-on and Turn-off delay time 13ns/55ns
Testing Conditions 400V, 30A, 5 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Win Source Part Number 051453-APT30GP60BDQ1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT30GP60BDQ1 CAD Model

Description

APT30GP60BDQ1

The APT30GP60BDQ1 is an advanced insulated gate bipolar transistor (IGBT) offering exceptional performance for a wide range of power electronics applications. Noted for its low on-state voltage, this component is perfect for use in motor drives, inverters, and power converters, where efficiency and durability are paramount.

  • Applications/Projects:
    • Motor drives
    • Inverters
    • Welders
    • Power converters
  • Features and Benefits:
    • Low on-state voltage: Minimizes power losses.
    • Fast switching: Enhances performance in dynamic applications.
    • Robust construction: Provides reliability in demanding environments.
    • Standard TO-247 package: Ensures compatibility with existing designs.

    Consult the product datasheet for specific ratings and application guidelines to optimize performance.

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