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Same model may have multiple batches, images only for reference.
APT15GP90KG Real Image
Same model may have multiple batches, images only for reference.

APT15GP90KG

Part No APT15GP90KG
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 900V 43A 250W TO220
Datasheet
APT15GP90KG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Microsemi Corporation
Series POWER MOS 7®
Package Tube
Product Status Obsolete
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 900 V
Current - Collector (Ic) (Max) 43 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 15A
Power - Max 250 W
Switching Energy 200µJ (off)
Input Type Standard
Gate Charge 60 nC
Td (on/off) @ 25°C 9ns/33ns
Test Condition 600V, 15A, 4.3Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220 [K]
Base Product Number APT15GP90
Standard Package 50 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 563955-APT15GP90KG
Ultra Librarian 3D Model Ultra Librarian APT15GP90KG CAD Model

Description

The APT15GP90KG is a single IGBT transistor from the POWER MOS 7 series. It is designed for high power applications and has a maximum power dissipation of 250W.

  • Collector-Emitter Breakdown Voltage (Vce): 900V
  • Maximum Collector Current (Ic): 43A
  • On-State Voltage (Vce(on)): 3.9V @ 15V gate-emitter voltage (Vge) and 15A collector current (Ic)
  • Gate Charge (Qg): 60nC @ 10V gate voltage (Vgs)
  • Mounting Type: Through-Hole
  • Package: TO-220-3
  • Manufacturer: Microsemi Corporation
  • ECCN Status: EAR99
  • MSL Level: 1

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