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Same model may have multiple batches, images only for reference.
2N6849 Real Image
Same model may have multiple batches, images only for reference.

2N6849

Part No 2N6849
Manufacturer Microsemi Corporation
Catalog FETs - Single
Description P.CHANNEL POWER MOSFETs | MOSFET P-CH 100V TO-205AF TO-39
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 6.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 320mOhm at 6.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 34.8nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 800mW, 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-39
Manufacturer Package TO-205AF Metal Can
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1124207-2N6849
Manufacturer Homepage www.semelab.co.uk
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2N6849 CAD Model

Description

The Microsemi Corporation MOSFET is a P-Channel transistor with a maximum drain-source breakdown voltage of 100V and continuous drain current of 6.5A.

  • Maximum Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 6.5A
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • FET Feature: Not specified
  • Package: TO-39
  • Power Dissipation: 800mW and 25W
  • Status: Obsolete
  • Drive Voltage: 10V
  • Maximum Rds On: 320mOhm @ 6.5A and 10V
  • Gate Charge Qg: 34.8nC @ 10V

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