The Micron MT53E1G64D4HJ-046 AAT:A is a DDR4 SDRAM component designed for high-performance and low-power applications. This memory chip is engineered to meet the demanding requirements of modern computing and embedded systems.

Applications

• Automotive Infotainment Systems
• Industrial Control Systems
• Networking Equipment
• Embedded Computing Platforms
• Mobile Devices

Features

• Capacity: 1Gb (64M x 16)
• Interface: DDR4 SDRAM
• Data Rate: Up to 2133 MT/s
• Operating Voltage: 1.2V
• Temperature Range: -40°C to +105°C (Automotive Grade)
• CAS Latency (CL): Specified in the part number's timing parameters
• Burst Length: 8
• On-Die Termination (ODT): Improves signal integrity
• Write CRC: Enhances data reliability
• Lead-Free and RoHS Compliant
• Package: FBGA

Benefits

• Extended Temperature Range: Operates reliably in harsh environments, making it suitable for automotive and industrial applications.
• High Bandwidth: DDR4 technology provides significantly higher bandwidth compared to previous generations.
• Low Power Consumption: 1.2V operation reduces power consumption, extending battery life in portable devices.
• Improved Signal Integrity: On-Die Termination (ODT) ensures reliable data transfer at high speeds.
• Enhanced Data Reliability: Write CRC provides error detection and correction for write operations.

Technical Specifications

The MT53E1G64D4HJ-046 AAT:A is compliant with JEDEC standards for DDR4 SDRAM. It supports various timing parameters and configurations for optimal performance. This component is manufactured using advanced process technology for enhanced reliability and low power consumption. Refer to the Micron datasheet for detailed specifications, electrical characteristics, and package information.