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MT41K512M8RH-125:D

Part No MT41K512M8RH-125:D
Manufacturer Micron Technology Inc.
Catalog DDR
Description DDR3-1600 512Mx8 (4Gb) 1.35V
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Series *
Win Source Part Number 940870-MT41K512M8RH-125:D
Ultra Librarian 3D Model Ultra Librarian MT41K512M8RH-125:D CAD Model

Description

The MT41K512M8RH-125:D is a high-performance DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component manufactured by Micron Technology Inc. This memory module is engineered for applications that require substantial memory capacity and high-speed data transfer. It is particularly well-suited for systems demanding efficient multitasking and rapid loading times, making it an excellent choice for a wide variety of computing needs.

Applications

  • Desktop Computers: Commonly used as main system memory to improve application performance and multitasking.
  • Workstations: Employed in professional workstations for handling large datasets and complex simulations.
  • Gaming PCs: Integrated into gaming PCs to provide the memory bandwidth required for high-resolution graphics and smooth gameplay.
  • Servers: Utilized in server environments to support virtual machines and data-intensive applications.
  • Industrial Computers: Deployed in industrial computing systems where reliable and fast memory is essential.

Features

  • DDR3 Technology: Utilizes DDR3 technology to deliver high data transfer rates and efficient memory access.
  • 4Gb Density: Provides a memory density of 4Gb (4 Gigabits).
  • x8 Organization: Organized as 512M x 8, enhancing data throughput and memory bandwidth.
  • Data Rate: Operates at a data rate of up to 1600 MT/s (MegaTransfers per second) with a -125 speed grade.
  • Refresh Options: Supports auto refresh and self refresh modes for efficient power management and optimal data retention.
  • RoHS Compliant: Compliant with Restriction of Hazardous Substances (RoHS) directive, ensuring environmental safety.

Benefits

  • High Bandwidth: Enables fast data transfer, boosting overall system responsiveness and performance.
  • Low Latency: Reduces delays in memory access, resulting in faster application loading and execution.
  • Reliable Performance: Ensures stable and consistent operation in demanding computing environments.
  • Large Memory Capacity: Supports complex applications, multitasking, and managing large datasets efficiently.
  • Enhanced Efficiency: DDR3 technology optimizes performance while maintaining energy efficiency.

Additional Details

The MT41K512M8RH-125:D adheres to JEDEC standards, ensuring compatibility with other DDR3-compliant devices. It supports various timing parameters and operational modes as specified by the DDR3 standard. The component is available in a FBGA (Fine-pitch Ball Grid Array) package, which allows for high-density mounting on printed circuit boards. Its operating temperature range typically spans from 0°C to +85°C, making it suitable for standard operating conditions.

The part number MT41K512M8RH-125:D specifies: MT indicates Micron Technology, 41 represents DDR3 SDRAM, K signifies the specific generation, 512M8 denotes 512Mb x 8 organization, RH refers to the package and specific features, -125 indicates the speed grade (1600 MT/s), and :D often represents specific revisions or testing grades.

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