The MT29F8G08MAAWC-ET:B is a NAND Flash memory component from Micron Technology Inc. This high-density storage solution is designed for various applications requiring non-volatile memory, including embedded systems, consumer electronics, and storage devices. It combines performance, reliability, and cost-effectiveness.

Applications

• Embedded systems
• Solid-state drives (SSDs)
• USB flash drives
• Memory cards
• Digital cameras

Features

• 8Gb (1024M x 8) capacity
• Supply voltage: 1.8V or 3.3V
• Page size: (4K + 128) Bytes
• Block size: (256K + 8K) Bytes
• ONFI 2.2 interface
• Asynchronous and synchronous data transfer
• Data retention: 10 years
• RoHS compliant

Benefits

• High-density storage in a compact form factor
• Fast data access and transfer rates
• Low power consumption
• Enhanced data integrity with ECC
• Long-term data retention
• Suitable for a wide range of applications

Additional Details

The MT29F8G08MAAWC-ET:B NAND Flash memory utilizes advanced process technology for achieving high storage density and performance. It features a page-based architecture for efficient data management and supports essential operations such as read, program, and erase. The device integrates error correction code (ECC) to ensure data integrity and reliability. Its operating temperature range typically spans from -40°C to 85°C, making it suitable for various environments, including industrial applications. This memory chip is used in devices that require non-volatile storage for firmware, operating systems, or user data.